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We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors,placed directly on an epitaxial grown, single crystalline,PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decentON current (19 ${\mu}A/{\mu}$m), high on-off ratio (10$^{7}$), and asubthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as theback gate oxide. Importantly, the ferroelectric polarization can directlycontrol the channel charge, showing a clear anti-clockwise hysteresis. We haveselfconsistently confirmed the switching of the ferroelectric and correspondingchange in channel current from a direct time-dependent measurement. Our resultsdemonstrate that it is possible to obtain transistor operation directly onpolar surfaces and therefore it should be possible to integrate 2D electronicswith single crystalline functional oxides.

Non Volatile MoS$_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric