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This work reports on the structural and magnetic properties ofMn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ Heusler films with different Fe content x (0$\leqslant$ x $\leqslant$ 1.2). The films were deposited heteroepitaxially onMgO single crystal substrates, by magnetron sputtering.Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films with the thickness of 35 nm werecrystallized in tetragonal D0$_{22}$ structure with (001) preferredorientation. Tunable magnetic properties were achieved by changing the Fecontent x. Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ thins films exhibit high uniaxialanisotropy Ku $\geqslant$ 1.4 MJ/m3, coercivity from 0.95 to 0.3 T andsaturation magnetization from 290 to 570 kA/m. The film withMn$_{1.6}$Fe$_{1.1}$Ga$_{1.3}$ composition shows high Ku of 1.47 MJ/m3 andenergy product ${(BH)_{max}}$ of 37 kJ/m3, at room temperature. These findingsdemonstrate that Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ films have promising propertiesfor mid-range permanent magnet and spintronic applications.

apl materials

Heteroepitaxial growth of tetragonal Mn$_{2.7-x}$Fe$_{x}$Ga$_{1.3}$ (0  $\leqslant$ x $\leqslant$ 1.2) Heusler films with perpendicular magnetic  anisotropy