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Transition metal oxide heterostructures and interfaces host a variety ofexciting quantum phases and can be grown with atomic-scale precision byutilising the intensity oscillations of $in$ $situ$ reflection high-energyelectron diffraction (RHEED). However, establishing a stable oscillationpattern in the growth calibration of complex oxides films is very challengingand time consuming. Here, we develop a substantially more efficient andreliable growth calibration method for complex oxide films using molecular beamepitaxy.

An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy