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One essential feature in MRAM cells is the spin torque efficiency, whichdescribes the ratio of the critical switching current to the energy barrier.Within this paper it is reported that the spin torque efficiency can beimproved by a factor of 3.2 by the use a of dual free layer device, whichconsists of one layer with perpendicular crystalline anisotropy and a secondlayer with in-plane crystalline anisotropy. Detailed simulations solving thespin transport equations simultaneously with the micromagnetics equation wereperformed in order to understand the origin of the switching current reductionby a factor of 4 for the dual layer structure compared to a single layerstructure. The main reason could be attributed to an increased spinaccumulation within the free layer due to the dynamical tilting of themagnetization within the in-plane region of the dual free layer.

Significant reduction of critical currents in MRAM designs using dual free layer with perpendicular and in-plane anisotropy