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We performed comparative experimental investigation of superconducting NbNnanowires which were prepared by means of positive-and negative electron-beamlithography with the same positive tone Poly-methyl-methacrylate (PMMA) resist.We show that nanowires with a thickness 4.9 nm and widths less than 100 nmdemonstrate at 4.2 K higher critical temperature and higher density of criticaland retrapping currents when they are prepared by negative lithography. Alsothe ratio of the experimental critical-current to the depairing criticalcurrent is larger for nanowires prepared by negative lithography. We associatethe observed enhancement of superconducting properties with the difference inthe degree of damage that nanowire edges sustain in the lithographic process. Awhole range of advantages which is offered by the negative lithography withpositive PMMA resist ensures high potential of this technology for improvingperformance metrics of superconducting nanowire singe-photon detectors.

Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist