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SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) havegained a significant importance in power electronics applications. However,electrically active defects at the SiC/SiO$_2$ interface degrade the idealbehavior of the devices. The relevant microscopic defects can be identified byelectron paramagnetic resonance (EPR) or electrically detected magneticresonance (EDMR). This helps to decide which changes to the fabrication processwill likely lead to further increases of device performance and reliability.EDMR measurements have shown very similar dominant hyperfine (HF) spectra indifferently processed MOSFETs although some discrepancies were observed in themeasured $g$-factors. Here, the HF spectra measured of different SiC MOSFETsare compared and it is argued that the same dominant defect is present in alldevices. A comparison of the data with simulated spectra of the C dangling bond(P$_\textrm{bC}$) center and the silicon vacancy (V$_\textrm{Si}$) demonstratesthat the P$_\textrm{bC}$ center is a more suitable candidate to explain theobserved HF spectra.

Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO$_2$ interface