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We report on the first integration of an antiferromagnetic Heusler compoundacting as a pinning layer into magnetic tunneling junctions. Theantiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks. The samples were prepared using magnetron co-sputtering. We investigatethe structural properties by X-ray diffraction and reflection, as well asatomic force and high-resolution transmission electron microscopy. We find anexcellent crystal growth quality with low interface roughnesses of 1-3 \r{A},which is crucial for the preparation of working tunnelling barriers. Using Feas a ferromagnetic electrode material we prepared magnetic tunneling junctionsand measured the magnetoresistance. We find a sizeable maximummagnetoresistance value of 135%, which is comparable to other common Fe basedMTJ systems.

Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices