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To reduce the level of thermally generated electrical noise transmitted tosuperconducting quantum devices operating at 20 mK, we have developed thin-filmmicrowave power attenuators operating from 1 to 10 GHz. The 20 dB and 30 dBattenuators are built on a quartz substrate and use 75 nm thick films ofnichrome for dissipative components and 0.001 mm thick silver films as hotelectron heat sinks. The noise temperature of the attenuators was quantified byconnecting the output to a 3D cavity containing a transmon qubit and extractingthe dephasing rate of the qubit as a function of temperature and dissipatedpower P_d in the attenuator. The minimum noise temperature T_n of the outputfrom the 20 dB attenuator was T_n less than and equal to 53 mK for noadditional applied power and T_n about 120 mK when dissipating 30 nW. In thelimit of large dissipated power (P_d > 1 nW) we find T_n proportional toP_d^(1/5.4), consistent with detailed thermal modeling of heat flow in theattenuators.

Microwave attenuators for use with quantum devices below 100 mK