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Sensitive charge detection has enabled qubit readout in solid-state systems.Recently, an alternative to the well-established charge detection via on-chipelectrometers has emerged, based on in situ gate detectors and radio-frequencydispersive readout techniques. This approach promises to facilitate scalabilityby removing the need for additional device components devoted to sensing. Here,we perform gate-based dispersive readout of an accumulation-mode siliconquantum dot. We observe that the response of an accumulation-mode gate detectoris significantly affected by its bias voltage, particularly if this exceeds thethreshold for electron accumulation. We discuss and explain these results inlight of the competing capacitive contributions to the dispersive response.

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor