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We report on an ion implantation technique utilizing a screening mask made ofSiO$_2$ to control both the depth profile and the dose. By appropriatelyselecting the thickness of the screening layer, this method fully suppressesthe ion channeling, brings the location of the highest NV density to thesurface, and effectively reduces the dose by more than three orders ofmagnitude. With a standard ion implantation system operating at the energy of10 keV and the dose of 10$^{11}$ cm$^2$ and without an additional etchingprocess, we create single NV centers close to the surface with coherence timesof a few tens of $\mu$s.

Nitrogen-vacancy centers created by N$^+$ ion implantation through screening SiO$_2$ layers on diamond