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ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developedmultilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ byx-ray photoelectron spectroscopy, corresponding to the electronic configurationof [Xe]4f1. Electrical resistivity showed the nonmonotonic temperaturedependence with a sharp resistivity maximum, concomitant with a magnetizationkink at 10 K, suggesting antiferromagnetic transition. In addition,magnetoresistance showed a large angular-dependent magnetoresistance. Theseresults imply that carrier transport in the Bi2- square net could be influencedby magnetic ordering in the Ce-O layer owing to its unique layered structure[Bi2-/(Ce2O2)2+], particularly in the form of epitaxial thin films.

Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer