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We studied the spin injection in a NiFe(Py)/Si system using broadbandferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Pylayer on top of the Si channel was determined as a function of the Si dopingconcentration and Py layer thickness. For fixed Py thickness we observed anincrease of the Gilbert damping parameter with decreasing resistivity of the Sichannel. For a fixed Si doping concentration we measured an increasing Gilbertdamping parameter for decreasing Py layer thickness. No increase of the Gilbertdamping parameter was found Py/Si samples with an insulating interlayer. Weattribute our observations to an enhanced spin injection into thelow-resistivity Si by spin pumping.

Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy