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We report the discovery of a very large thermoelectric power over -400 microVK-1 in the whisker crystals of a one-dimensional telluride Ta4SiTe4, whilemaintaining a low electrical resistivity of rho = 2 mohm cm, yielding a verylarge power factor of P = 80 microW cm-1 K-2 at an optimum temperature of 130K. This temperature is widely controlled from the cryogenic temperature of 50 Kto room temperature by chemical doping, resulting in the largest P of 170microW cm-1 K-2 at 220-280 K. These P values far exceed those of theBi2Te3-Sb2Te3 alloys at around room temperature, offering an avenue forrealizing the practical-level thermoelectric cooling at low temperatures. Thecoexistence of a one-dimensional electronic structure and a very small band gapappearing in the vicinity of the Dirac semimetals probably causes the verylarge power factors in Ta4SiTe4, indicating that the "one-dimensional Diracsemimetal" is a promising way to find high-performance thermoelectric materialsfor the low temperature applications.

Large Thermoelectric Power Factor at Low Temperatures in One-Dimensional Telluride Ta4SiTe4