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The sensitivity of direct terahertz detectors based on self-mixing ofterahertz electromagnetic wave in field-effect transistors is being improvedwith noise-equivalent power close to that of Schottky-barrier-diode detectors.Here we report such detectors based on AlGaN/GaN two-dimensional electron gasat 77~K are able to sense broadband and incoherent terahertz radiation. Themeasured photocurrent as a function of the gate voltage agrees well with theself-mixing model and the spectral response is mainly determined by theantenna. A Fourier-transform spectrometer equipped with detectors designed for340, 650 and 900~GHz bands allows for terahertz spectroscopy in a frequencyrange from 0.1 to 2.0~THz. The 900~GHz detector at 77~K offers an opticalsensitivity about $1~\mathrm{pW/\sqrt{Hz}}$ being comparable to a commercialsilicon bolometer at 4.2~K. By further improving the sensitivity,room-temperature detectors would find applications in active/passive terahertzimaging and terahertz spectroscopy.

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors