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Optoelectronic devices based on graphene and other two-dimensional (2D)materials, such as transition metal dichalcogenides (TMDs) are the focus ofwide research interest. The characterization these emerging atomically thinmaterials and devices strongly relies on a set of measurements involving bothoptical and electronic instrumentation ranging from scanning photocurrentmapping to Raman and photoluminescence (PL) spectroscopy. Furthermore,proof-of-concept devices are usually fabricated from micro-meter size flakes,requiring microscopy techniques to characterize them. Current state-of-the-artcommercial instruments offer the ability to characterize individual propertiesof these materials with no option for the in situ characterization of a wideenough range of complementary optical and electrical properties. Presently, therequirement to switch atomically-thin materials from one system to anotheroften radically affects the properties of these uniquely sensitive materialsthrough atmospheric contamination. Here, we present an integrated,multi-purpose instrument dedicated to the optical and electricalcharacterization of devices based on 2D materials which is able to perform lowfrequency electrical measurements, scanning photocurrent mapping, Raman,absorption and PL spectroscopy in one single set-up. We characterize thisapparatus by performing multiple measurements on graphene, transition metaldichalcogenides (TMDs) and Si. The performance and resolution of eachindividual measurement technique is found to be equivalent to that ofcommercially available instruments. Contrary to nowadays commercial systems, asignificant advantage of the developed instrument is that for the first timethe integration of a wide range of complementary opto-electronic andspectroscopy characterization techniques is demonstrated in a single compactunit.

An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices