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We report on a technique for applying a DC bias in a 3D microwave cavity. Weachieve this by isolating the two halves of the cavity with a dielectric anddirectly using them as DC electrodes. As a proof of concept, we embed avariable capacitance diode in the cavity and tune the resonant frequency with aDC voltage, demonstrating the incorporation of a DC bias into the 3D cavitywith no measurable change in its quality factor at room temperature. We alsocharacterize the architecture at millikelvin temperatures and show that thesplit cavity design maintains a quality factor $Q_\text{i} \sim 8.8 \times10^5$, making it promising for future quantum applications.

A split-cavity design for the incorporation of a DC bias in a 3D microwave cavity