English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Strain engineering has attracted great attention, particularly for epitaxialfilms grown on a different substrate. Residual strains of SiC have been widelyemployed to form ultra-high frequency and high Q factor resonators. However, todate the highest residual strain of SiC was reported to be limited toapproximately 0.6%. Large strains induced into SiC could lead to severalinteresting physical phenomena, as well as significant improvement of resonantfrequencies. We report an unprecedented nano strain-amplifier structure with anultra-high residual strain up to 8% utilizing the natural residual stressbetween epitaxial 3C SiC and Si. In addition, the applied strain can be tunedby changing the dimensions of the amplifier structure. The possibility ofintroducing such a controllable and ultra-high strain will open the door toinvestigating the physics of SiC in large strain regimes, and the developmentof ultra sensitive mechanical sensors.

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification