English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Large area epitaxy of two-dimensional (2D) layered materials with highmaterial quality is a crucial step in realizing novel device applications basedon 2D materials. In this work, we report high-quality, crystalline, large-areagallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphireand gallium nitride (GaN) using a valved cracker source for Se. (002)-orientedGaSe with random in-plane orientation of domains was grown on sapphire and GaNsubstrates at a substrate temperature of 350-450 C with complete surfacecoverage and smooth surface morphology. Higher growth temperature (575 C)resulted in the formation of single-crystalline {\epsilon}-GaSe triangulardomains with six-fold symmetry confirmed by in-situ reflection high electronenergy diffraction (RHEED) and off-axis x-ray diffraction (XRD). A two-stepgrowth method involving high temperature nucleation of single crystallinedomains and low temperature growth to enhance coalescence was adopted to obtaincontinuous (002)-oriented GaSe with an epitaxial relationship with thesubstrate. While six-fold symmetry was maintained in the two step growth,{\beta}-GaSe phase was observed in addition to the dominant {\epsilon}-GaSe incross-sectional scanning transmission electron microscopy images. This workdemonstrates the potential of growing high quality 2D-layered materials usingmolecular beam epitaxy and can be extended to the growth of other transitionmetal chalcogenides.

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates