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Modulation-doped oxide two-dimensional electron gas (2DEG) formed at theLaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface,provides new opportunities for electronics as well as quantum physics. Herein,we studied the dependence of Sr-doping of La1-xSrxMnO3 (LSMO, x=0, 1/8, 1/3,1/2, and 1) thus the filling of the Mn eg subbands as well as the LSMO polarityon the transport properties of d-LAO/LSMO/STO. Upon increasing the LSMO filmthickness from 1 unit cell (uc) to 2 uc, a sharp metal to insulator transitionof interface conduction was observed, independent of x. The resultant electronmobility is often higher than 1900 cm2V-1s-1 at 2 K, which increases upondecreasing x. The sheet carrier density, on the other hand, is in the range of6.9E1012~1.8E1013 cm-2 (0.01~0.03 e/uc) and is largely independent on x for allthe metallic d-LAO/LSMO (1 uc)/STO interfaces. These results are consistentwith the charge transfer induced modulation doping scheme and clarify that thepolarity of the buffer layer plays a trivial role on the modulation doping. Thenegligible tunability of the carrier density could result from the reduction ofLSMO during the deposition of disordered LAO or that the energy levels of Mn 3delectrons at the interface of LSMO/STO are hardly varied even when changing theLSMO composition from LMO to SrMnO3.

Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces