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The observation of a 0.5 conductance plateau in asymmetrically biased quantumpoint contacts with in-plane side gates has been attributed to the onset ofspin-polarized current through these structures. For InAs quantum pointcontacts with the same width but longer channel length, there is roughly afourfold increase in the range of common sweep voltage applied to the sidegates over which the 0.5 conductance plateau is observed when the QPC aspectratio (ratio of length over width of the narrow portion of the structure) isincreased by a factor 3. Non-equilibrium Green s function simulations indicatethat the increase in the size of the 0.5 conductance plateau is due to anincreased importance, over a larger range of common sweep voltage, of theeffects of electron-electron interactions in QPC devices with larger aspectratio. The use of asymmetrically biased QPCs with in-plane side gates and largeaspect ratio could therefore pave the way to build robust spin injectors anddetectors for the successful implementation of spin field effect transistors

Dependence of the 0.5(2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates