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Electrostatic force microscopy and scanning thermal microscopy are employed to investigate the electric transport and localized heating around defects introduced during transfer of graphene grown by chemical vapor deposition to an oxidized Si substrate. Numerical and analytical models are developed to explain the results based on the reported basal-plane thermal conductivity, κ, and interfacial thermal conductance, G, of graphene and to investigate their effects on the peak temperature. Irrespective of the κ values, increasing G beyond 4 × 107 W m−2 K−1 can reduce the peak temperature effectively for graphene devices made on sub-10 nm thick gate dielectric, but not for the measured device made on 300-nm-thick oxide dielectric, which yields a cross-plane thermal conductance (Gox) much smaller than the typical G of graphene. In contrast, for typical G values reported for graphene, increasing κ from 300 W m−1 K−1 toward 3000 W m−1 K−1 is effective in reducing the hot spot temperature for the 300-nm-thick oxi...

Effects of basal-plane thermal conductivity and interface thermal conductance on the hot spot temperature in graphene electronic devices