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We present GaAs/AlGaAs double quantum well devices that can operate as bothelectron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers asnarrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configurationwe observe signs of magnetic-field-induced exciton condensation in the quantumHall bilayer regime. In the same devices we can study the zero-magnetic-fielde-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb dragresistivity (up to 10% of the single layer resistivity) is observed at liquidhelium temperatures, but no definite signs of exciton condensation are seen inthis case. Self-consistent calculations of the electron and hole wavefunctionsshow this might be because the average interlayer separation is larger in thee-h case than the h-h case.

A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems