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We report on the growth and characterization ofTi/$La_{1/3}$$Ca_{2/3}$Mn$O_3$/Si$O_x$/n-Si memristive devices. We demonstratethat using current as electrical stimulus unveils an intermediate resistancestate, in addition to the usual high and low resistance states that areobserved in standard voltage controlled experiments. Based on thoroughelectrical characterization (impedance spectroscopy, current-voltage curvesanalysis), we disclose the contribution of three different microscopic regionsof the device to the transport properties: an ohmic incomplete metallicfilament, a thin manganite layer below the filament tip exhibitingPoole-Frenkel like conduction, and the SiOx layer with an electrical responsewell characterized by a Child-Langmuir law. Our results suggest that theexistence of the SiOx layer plays a key role in the stabilization of theintermediate resistance level, indicating that the combination of two or moreactive RS oxides adds functionalities in relation to single-oxide devices. Weunderstand that these multilevel devices are interesting and promising as theirfabrication procedure is rather simple and they are fully compatible withstandard Si-based electronics.

Origin of multistate resistive switching in Ti/manganite/Si$O_x$/Si heterostructures