English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (JR) of TiN SBDs increases exponentially with the increase of reverse voltage (VR) from 0 to −3.2 V (Reg. I). This conduction behavior is dominated by Poole-Frenkel emission from TiN through an interface state of 0.53 eV to the conductive dislocation-related continuum states. The obtained interface state of 0.53 eV may be due to the plasma damage to the surface of the AlGaN/GaN HEMT structure during the TiN sputtering. When the TiN SBDs are biased with −20 < VR < −3.2 V, JR saturated due to the depletion of the 2-dimensional electron gas (2DEG) channel (Reg. II). This conduction behavior is dominated by the trap-assisted tunneling through the interface state at ∼0.115 eV above the Fermi level. The three terminal OFF-state gate leakage current of AlGaN/GaN HEMTs exhibited an activation energy of 0.159 eV,...

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN