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While the recent establishment of the role of thermophoresis/diffusion-drivenoxygen migration during resistance switching in metal oxide memristors providedcritical insights required for memristor modeling, extended investigations ofthe role of oxygen migration during ageing and failure remain to be detailed.Such detailing will enable failure-tolerant design, which can lead to enhancedperformance of memristor-based next-generation storage-class memory. Here wedirectly observed lateral oxygen migration using in-situ synchrotron x-rayabsorption spectromicroscopy of HfOx memristors during initial resistanceswitching, wear over millions of switching cycles, and eventual failure,through which we determined potential physical causes of failure. Using thisinformation, we reengineered devices to mitigate three failure mechanisms, anddemonstrated an improvement in endurance of about three orders of magnitude.

Oxygen migration during resistance switching and failure of hafnium oxide memristors