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We have investigated the gate-voltage dependence and the temperaturedependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxidethin-film transistors. A weak-localization feature is observed at smallmagnetic fields on top of an overall negative magnetoconductivity at higherfields. An intriguing controllable competition between weak localization andweak antilocalization is observed by tuning the gate voltage or varying thetemperature. Our findings reflect controllable quantum interference competitionin the electron systems in amorphous indium-gallium-zinc-oxide thin-filmtransistors.

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors