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Controlling the insulator-to-2D-metal transition is a promising key toovercome the scaling problem that silicon-based electronic devices will face inthe near future. In this context, we examine the channel formation ofSrTiO3-based solid-gated field-effect devices in which a 2D metal phasecoexists with a semiconductor phase. A non-monotonic voltage-gain transfercharacteristic with negative and positive slope regions is observed. Weintroduce a numerical model that helps to rationalize the experimental findingsin terms of the established physics of field-effect transistors andpercolation. Our numerical study not only reproduces the experimental resultsbut also provides non-trivial predictions, which we verify experimentally.

applied physics letters

Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3  field-effect transistor due to percolative insulator to two-dimensional metal  transition