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Molecular beam epitaxy technique has been used to deposit a single layer anda bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situand ex-situ measurements show that the layered MoSe 2 grows in a scalablemanner on the substrate and reveals characteristics of a stoichiometric2H-phase. The layered MoSe 2 exhibits polycrystalline features with domainsseparated by defects and boundaries. Temperature and magnetic field dependentresistivity measurements unveil a carrier hopping character described withintwo-dimensional variable range hopping mechanism. Moreover, a negativemagnetoresistance was observed, stressing a fascinating feature of the chargetransport under the application of a magnetic field in the layered MoSe 2system. This negative magnetoresistance observed at millimeter-scale is similarto that observed recently at room temperature inWS2 flakes at a micrometerscale [Zhang et al., Appl. Phys. Lett. 108, 153114 (2016)]. This scalabilityhighlights the fact that the underlying physical mechanism is intrinsic tothese two-dimensional materials and occurs at very short scale.

Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance