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We investigated the effect of a Mg-Al layer insertion at the bottom interfaceof epitaxial Fe/$MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions (MTJs) ontheir spin-dependent transport properties. The tunnel magnetoresistance (TMR)ratio and differential conductance spectra for the parallel magneticconfiguration exhibited clear dependence on the inserted Mg-Al thickness. Aslight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a largeTMR ratio above 200% at room temperature and observing a distinct local minimumstructure in conductance spectra. In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/$MgAl_{2}O_{4}$ interface. Therefore, a minimalMg-Al insertion was found to be effective to maximize the TMR ratio for asputtered $MgAl_{2}O_{4}$-based MTJ.

Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions