English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report on a theoretical study of the electronic structures of freestandingnanowires made from narrow band gap semiconductors GaSb, InSb and InAs. Thenanowires are described by the eight-band k.p Hamiltonians and the bandstructures are computed by means of the finite element method in a mixturebasis consisting of linear triangular elements inside the nanowires andconstrained Hermite triangular elements near the boundaries. The nanowires withtwo crystallographic orientations, namely the [001] and [111] orientations, andwith different cross-sectional shapes are considered. For each orientation, thenanowires of the three narrow band gap semiconductors are found to showqualitatively similar characteristics in the band structures. However, thenanowires oriented along the two different crystallographic directions arefound to show different characteristics in the valence bands. In particular, itis found that all the conduction bands show simple, good parabolic dispersionsin both the [001]- and [111]-oriented nanowires, while the top valence bandsshow double-maximum structures in the [001]-oriented nanowires, butsingle-maximum structures in the [111]-oriented nanowires. The wave functionsand spinor distributions of the band states in these nanowires are alsocalculated. It is found that significant mixtures of electron and hole statesappear in the bands of these narrow band gap semiconductor nanowires. The wavefunctions exhibit very different distribution patterns in the nanowiresoriented along the [001] direction and the nanowires oriented along the [111]direction. It is also shown that single-band effective mass theory could notreproduce all the band state wave functions presented in this work.

k.p theory of freestanding narrow band gap semiconductor nanowires