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It has been reported in experiments that capping layers which enhance theperpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs)induce great impact on the tunnel magnetoresistance (TMR). To explore theessential influence caused by capping layers, we carry out ab initiocalculations on TMR in the X(001)|CoFe(001)|MgO(001)|CoFe(001)|X(001) MTJ,where X represents the capping layer material which can be tungsten, tantalumor hafnium. We report TMR in different MTJs and demonstrate that tungsten is anideal candidate for a giant TMR ratio. The transmission spectrum in Brillouinzone is presented. It can be seen that in the parallel condition of MTJ, sharptransmission peaks appear in the minority-spin channel. This phenomenon isattributed to the resonant tunnel transmission effect and we explained it bythe layer-resolved density of states (DOS). In order to explore transportproperties in MTJs, the density of scattering states (DOSS) was studied fromthe point of band symmetry. It has been found that CoFe|tungsten interfaceblocks scattering states transmission in the anti-parallel condition. This workreports TMR and transport properties in MTJs with different capping layers, andproves that tungsten is a proper capping layer material, which would benefitthe design and optimization of MTJs.

Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions