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Transition metal dichalcogenide (TMDC) monolayers have attracted muchattention due to their strong light absorption and excellent electronicproperties. These advantages make this type of two-dimensional crystal apromising one for optoelectronic device applications. In the case ofphotoelectric conversion devices such as photodetectors and photovoltaic cells,p-n junctions are one of the most important devices. Here, we demonstratephotodetection with WSe2 monolayer films. We prepare the electrolyte-gatedambipolar transistors and electrostatic p-n junctions are formed by theelectrolyte-gating technique at 270 K. These p-n junctions are cooled down tofix the ion motion (and p-n junctions) and we observed the reasonablephotocurrent spectra without the external bias, indicating the formation of p-njunctions. Very interestingly, two-terminal devices exhibit higherphotoresponsivity than that of three-terminal ones, suggesting the formation ofhighly balanced anion and cation layers. The maximum photoresponsivity reaches5 mA/W in resonance with the first excitonic peak. Our technique providesimportant evidence for optoelectronics in atomically thin crystals.

Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals