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Quantum spin Hall (QSH) effect is promising for achieving dissipationlesstransport devices due to the robust gapless states inside insulating bulk gap.Here, by using first-principles calculations, we discover group-IV chalcogenideSi2Te2 film to be a 2D QSH insulator with a fundamental band gap of 0.29 eV,which is tunable under external strain. This nontrivial topological phase stemsfrom band inversion between the Si-px,y and Te-px,y orbitals, demonstrated by asingle pair of topologically protected helical edge states with Dirac pointlocating in the bulk gap. Notably, the characteristic properties of edgestates, such as the Fermi velocity and edge shape, can be tuned by edgemodifications. Additionally, the h-BN semiconductor is an ideal substrate forexperimental realization of 2D Si2Te2 film, without destroying its nontrivialtopology. Our works open a new route for designing topological spintronicsdevices based on 2D silicon-based films.

Two-Dimensional Group-IV Chalcogenide Si2Te2 film: A New Quantum Spin Hall Insulator with Sizable Band Gap