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Metal electrodes are a universal element of all electronic devices.Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used aselectrodes in complex-oxide heterostructures due to good lattice mismatcheswith perovskite substrates. However, when compared to SRO single crystals, SROthin films have shown reduced conductivity and Curie temperatures (T_C), whichcan lead to higher Joule heating and energy loss in the devices. Here, wereport that high-quality SRO thin films can be synthesized by controlling theplume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-timeoptical spectroscopic monitoring. The SRO thin films grown under thekinetically controlled conditions, down to ca. 16 nm in thickness, exhibit bothenhanced conductivity and T_C as compared to bulk values, due to their improvedstoichiometry and a strain-mediated increase of the bandwidth of Ru 4delectrons. This result provides a direction for enhancing the physicalproperties of PLE-grown thin films and paves a way for improved deviceapplications.

Enhanced metallic properties of SrRuO3 thin films via kinetically controlled pulsed laser epitaxy