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Mostly, optical spectroscopies are used to investigate the physics ofexcitons, whereas their electrical evidences are hardly explored. Here, weexamined a forward bias activated differential capacitance response ofGaInP-AlGaInP based multi-quantum well laser diodes to trace the presence ofexcitons using electrical measurements. Occurrence of negative activationenergy after light emission is understood as thermodynamical signature ofsteady state excitonic population under intermediate range of carrierinjections. Similar corroborative results are also observed in an InGaAs-GaAsquantum dot laser structure grown by molecular beam epitaxy. With increasingbiases, the measured differential capacitance response slowly vanishes. Thisrepresents gradual Mott transition of an excitonic phase into an electron-holeplasma in a GaInP-AlGaInP laser diode. This is further substantiated by moreand more exponentially looking shapes of high energy tails inelectroluminescence spectra with increasing forward bias, which originates froma growing non-degenerate population of free electrons and holes. Such anexperimental correlation between electrical and optical properties of excitonscan be used to advance the next generation excitonic devices.

Negative activation energy and dielectric signatures of excitons and excitonic Mott transitions in quantum confined laser structures