Open AccessImproving the radiation hardness of graphene field effect transistors
Author(s) -
Κωνσταντίνος Αλεξάνδρου,
Arjun V. Masurkar,
Hassan Edrees,
James F. Wishart,
Yufeng Hao,
Nicholas Petrone,
James Hone,
Ioannis Kymissis
Publication year - 2016
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4963782
Subject(s) - graphene , ionizing radiation , radiation hardening , materials science , optoelectronics , radiation , transistor , radiation damage , semiconductor device , silicon , semiconductor , reliability (semiconductor) , irradiation , nanotechnology , voltage , electrical engineering , optics , physics , nuclear physics , quantum mechanics , power (physics) , engineering , layer (electronics)