English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Significant efficiency droop is a major concern for light-emitting diodes andlaser diodes operating at high current density. Recent study has suggested thatheavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination andtherefore alleviate the efficiency droop. Using density functional theory, westudied a newly fabricated quaternary alloy, GaAs1-x-yPyBix, which can hostsignificant amounts of Bi, through calculations of its band gap, spin-orbitsplitting, and band offsets with GaAs. We found that the band gap changes ofGaAs1-x-yPyBix relative to GaAs are determined mainly by the local structuralchanges around P and Bi atoms rather than their electronic structuredifferences. To obtain alloy with lower Auger recombination than GaAs bulk, weidentified the necessary constraints on the compositions of P and Bi. Finally,we demonstrated that GaAs/GaAs1-x-yPyBix heterojunctions with potentially lowAuger recombination can exhibit small lattice mismatch and large enough bandoffsets for strong carrier confinement. This work shows that the electronicproperties of GaAs1-x-yPyBix are potentially suitable for high-energy infraredlight-emitting diodes and laser diodes with improved efficiency.

First-principles Predictions of Electronic Properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based Heterojunctions