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We present an experimental study of spin transport in single layer grapheneusing atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier forspin injection. While h-BN is expected to be favorable for spin injection,previous experimental studies have been unable to achieve spin relaxation timesin the nanosecond regime, suggesting potential problems originating from thecontacts. Here, we investigate spin relaxation in graphene spin valves withh-BN barriers and observe room temperature spin lifetimes in excess of ananosecond, which provides experimental confirmation that h-BN is indeed a goodbarrier material for spin injection into graphene. By carrying out measurementswith different thicknesses of h-BN, we show that few layer h-BN is a betterchoice than monolayer for achieving high non-local spin signals and longer spinrelaxation times in graphene.

Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers