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High field pinning centers in MgB2 doped with 2 at. % carbon under a low and a high hot isostatic pressures have been investigated by transport measurements. The field dependence of the transport critical current density was analyzed within the different pinning mechanisms: surface pinning, point pinning, and pinning due to spatial variation in the Ginzburg-Landau parameter (Δκ pinning). Research indicates that a pressure of 1 GPa allows similar pinning centers to Δκ pinning centers to be obtained. This pinning is very important, because it makes it possible to increase the critical current density in high magnetic fields at 20 K and 25 K. Our results indicate that the δTc and δl pinning mechanisms, which are due to a spatial variation in the critical temperature (Tc) and the mean free path, l, respectively, create dislocations. The high density of dislocations with inhomogeneous distribution in the structure of the superconducting material creates the δl pinning mechanism. The low density of dislocations...

Experimental research of high field pinning centers in 2% C doped MgB2 wires at 20 K and 25 K