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There are three possible ways of reducing the charge density (ns) in the N-polar high electron mobility transistors (HEMT) structures, by decreasing the channel thickness, applying reverse gate bias, or modifying the back-barrier. Understanding the behavior of 2DEG mobility as a function of ns is essential to design high performance HEMT devices. Experimental data show that in the N-polar HEMT structures, the 2DEG mobility reduces as the ns decreases by applying reverse gate bias or decreasing channel thickness, whereas in the Ga-polar HEMT structures, the 2DEG mobility increases as the ns in the channel decreases by applying reverse gate bias. In this paper, the 2DEG mobility as a function of ns is calculated in N-polar HEMTs for three different aforementioned cases, and is compared to that in the Ga-polar HEMT structures. It is shown that the conventional scattering mechanisms cannot explain these different behaviors. Two new scattering mechanisms, such as scattering from charged interface states and su...

Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures