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InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gassource molecular beam epitaxy for realizing the type II band-edge line-up. Bothtype I and type II transitions were observed in the Bi containing W QWs and thephotoluminescence intensity was enhanced in the sample with a high Bi content,which is mainly due to the improvement of carrier confinement. Blue-shift oftype II transitions at high excitation power density was observed and ascribedto the band-bending effect. The calculated transition energies based on 8 bandk.p model fit well with the experiment results. The experimental andtheoretical results show that the type-II QW design is a new promisingcandidate for realizing long wavelength GaAs-based light emitting devices near1.3 um.

Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy