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Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near-and mid-infrared applications, particularly in 1.55 $\mu$m opticalcommunication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAsreduces the effective bandgap rapidly, while significantly increasing thespin-orbit-splitting energy. Additional incorporation of dilute amounts ofNitrogen (N) helps to attain lattice matching with GaAs, while providing aroute for flexible bandgap tuning. Here we present a study of the electronicbandstructure and optical gain of the lattice matchedGaN$_x$Bi$_y$As$_{1-x-y}$/GaAs quaternary alloy quantum well (QW) based on the16-band k$\cdot$p model. We have taken into consideration the interactionsbetween the N and Bi impurity states with the host material based on the bandanticrossing (BAC) and valence band anticrossing (VBAC) model. The optical gaincalculation is based on the density matrix theory. We have considered differentlattice matched GaNBiAs QW cases and studied their energy dispersion curves,optical gain spectrum, maximum optical gain and differential gain; and comparedtheir performances based on these factors. The thickness and composition ofthese QWs were varied in order to keep the emission peak fixed at 1.55 $\mu$m.The well thickness has an effect on the spectral width of the gain curves. Onthe other hand, a variation in the injection carrier density has differenteffects on the maximum gain and differential gain of QWs of varyingthicknesses. Among the cases studied, we found that the 6.3 nm thickGaN$_3$Bi$_{5.17}$As$_{91.83}$ lattice matched QW was most suited for 1.55$\mu$m (0.8 eV) GaAs-based photonic applications.

journal of applied physics

Electronic bandstructure and optical gain of lattice matched III-V  dilute nitride bismide quantum wells for 1.55 $\mu$m optical communication  systems