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The current-voltage characteristic and ideality factor of III-Nitride quantumwell light-emitting diodes (LEDs) grown on bulk GaN substrates areinvestigated. At operating temperature, these electrical properties exhibit asimple behavior. A model in which only active-region recombinations have acontribution to the LED current is found to account for experimental results.The limit of LED electrical efficiency is discussed based on the model and onthermodynamic arguments, and implications for electroluminescent cooling areexamined.

applied physics letters

Electrical properties of III-Nitride LEDs: recombination-based injection  model and theoretical limits to electrical efficiency and electroluminescent  cooling