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We have investigated the tunneling transport of mono- and few-layers of MnPS3by using conductive atomic force microscopy. Due to the band alignment ofindium tin oxide/MnPS3/Pt-Ir tip junction, the key features of both Schottkyjunction and Fowler-Nordheim tunneling (FNT) were observed for all the sampleswith varying thickness. Using the FNT model and assuming the effective electronmass (0.5 me) of MnPS3, we estimate the tunneling barrier height to be 1.31 eVand the dielectric breakdown strength as 5.41 MV/cm.

Tunneling transport of mono- and few-layers magnetic van der Waals MnPS$_3$