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Ultrathin two-dimensional semiconductors obtained from layeredtransition-metal dichalcogenides such as molybdenum disulfide (MoS2) arepromising for ultimately scaled transistors beyond Si. Although the shorteningof the semiconductor channel is widely studied, the narrowing of the channel,which should also be important for scaling down the transistor, has beenexamined to a lesser degree thus far. In this study, the impact of narrowing onmechanically exfoliated MoS2 flakes was investigated according to thechannel-width-dependent Schottky barrier heights at Cr/Au contacts. Narrowerchannels were found to possess a higher Schottky barrier height, which isascribed to the edge-induced band bending in MoS2. The higher barrier heightsdegrade the transistor performance as a higher electrode-contact resistance.Theoretical analyses based on Poisson's equation showed that the edge-inducedeffect can be alleviated by a high dopant impurity concentration, but thisstrategy should be limited to channel widths of roughly 0.7 micrometers becauseof the impurity-induced charge-carrier mobility degradation. Therefore, propertermination of the dangling bonds at the edges should be necessary foraggressive scaling with layered semiconductors.

Edge-induced Schottky barrier modulation at metal contacts to exfoliated molybdenum disulfide flakes