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We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) bytemperature-dependent photoluminescence spectroscopy under both continuous-waveand pulsed excitation. Both the peak energy and the linewidth of the emissionband associated with the quantum sheets exhibit an anomalous dependence ontemperature indicative of carrier localization. Photoluminescence transientsreveal a power law decay at low temperatures reflecting that the recombiningelectrons and holes occupy spatially separate, individual potential minimareminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting thecharacteristic disorder of a random alloy. At elevated temperatures, carrierdelocalization sets in and is accompanied by a thermally activated quenching ofthe emission. We ascribe the strong nonradiative recombination to extendedstates in the GaN barriers and confirm our assumption by a simple rate-equationmodel.

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN