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We consider the carrier transport and plasmonic phenomena in the lateralcarbon nanotube (CNT) networks forming the device channel with asymmetricelectrodes. One electrode is the Ohmic contact to the CNT network and theanother contact is the Schottky contact. These structures can serve asdetectors of the terahertz (THz) radiation. We develop the device model forresponse of the lateral CNT networks which comprise a mixture of randomlyoriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). Theproposed model includes the concept of the two-dimensional plasmons inrelatively dense networks of randomly oriented CNTs (CNT "felt") and predictsthe detector responsivity spectral characteristics. The detection mechanism isthe rectification of the ac current due the nonlinearity of the Schottkycontact current-voltage characteristics under the conditions of a strongenhancement of the potential drop at this contact associated with the plasmonexcitation. We demonstrate that the excitation of the two-dimensional plasmonsby incoming THz radiation the detector responsivity can induce sharp resonantpeaks of the detector responsivity at the signal frequencies corresponding tothe plasmonic resonances. The detector responsivity depends on the fractions ofthe s- and m-CNTs. The burning of the near-contact regions of the m-CNTs ordestruction of these CNTs leads to a marked increase in the responsivity inagreement with our experimental data. The resonant THz detectors withsufficiently dense lateral CNT networks can compete and surpass other THzdetectors using plasmonic effects at room temperatures.

Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection