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Using 3 dimensional numerical simulations, this paper shows that grading the atomic number and thus the resistivity at the interface between an embedded high atomic number guide element and a lower atomic number substrate enhances the growth of a resistive magnetic field. This can lead to a large integrated magnetic flux density, which is fundamental to confining higher energy fast electrons. This results in significant improvements in both magnetic collimation and fast-electron-temperature uniformity across the guiding. The graded interface target provides a method for resistive guiding that is tolerant to laser pointing.

The effect of grading the atomic number at resistive guide element interface on magnetic collimation