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We report the growth of thin films of the mixed valence compound YbAl$_{3}$on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer,epitaxial (001) films can be grown with sub-nm surface roughness. Using x-raydiffraction, in situ low-energy electron diffraction and aberration-correctedscanning transmission electron microscopy we establish that the films areordered in the bulk as well as at the surface. Our films show a coherencetemperature of 37 K, comparable to that reported for bulk single crystals.Photoelectron spectroscopy reveals contributions from both $\textit{f}^{13}$and $\textit{f}^{12}$ final states establishing that YbAl$_{3}$ is a mixedvalence compound and shows the presence of a Kondo Resonance peak near theFermi-level.

Epitaxial growth and electronic properties of mixed valence YbAl3 thin films