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A single electron dynamic memory is designed based on the non-equilibriumdynamics of charge states in electrostatically-defined metallic quantum dots.Using the orthodox theory for computing the transfer rates and a masterequation, we model the dynamical response of devices consisting of a chargesensor coupled to either a single and or a double quantum dot subjected to apulsed gate voltage. We show that transition rates between charge states inmetallic quantum dots are characterized by an asymmetry that can be controlledby the gate voltage. This effect is more pronounced when the switching betweencharge states corresponds to a Markovian process involving electron transportthrough a chain of several quantum dots. By simulating the dynamics of electrontransport we demonstrate that the quantum box operates as a finite-statemachine that can be addressed by choosing suitable shapes and switching ratesof the gate pulses. We further show that writing times in the ns range andretention memory times six orders of magnitude longer, in the ms range, can beachieved on the double quantum dot system using experimentally feasibleparameters thereby demonstrating that the device can operate as a dynamicsingle electron memory.

Operation of a quantum dot in the finite-state machine mode: single-electron dynamic memory